IndiumV3, Russie, Analysis, bibRecord, 000218

Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

Identifieur interne : 000218 ( Russie/Analysis ); précédent : 000217; suivant : 000219

Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

Auteurs : RBID : Pascal:08-0155910

Descripteurs français

Pascal (Inist)
- Luminescence, Laser semiconducteur, Diode laser, Guide onde optique, Laser guide onde, Laser puits quantique, Haute température, Spectre émission, Caractéristique courant tension, Composé ternaire, Gallium Arséniure, Aluminium Arséniure, Cycle hystérésis, Indium Arséniure, Puissance sortie, As Ga In, InGaAs, Laser AlGaAs, 4255P, 4279G.

English descriptors

KwdEn :
- Aluminium Arsenides, Emission spectra, Gallium Arsenides, High temperature, Hysteresis loop, IV characteristic, Indium Arsenides, Laser diodes, Luminescence, Optical waveguides, Output power, Quantum well lasers, Semiconductor lasers, Ternary compounds, Waveguide lasers.

Abstract

It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading to abrupt hysteresis-type changes in the light-current and spectral characteristics. The post-threshold rise of the CTAL flux within the non-lasing parts of the active region is most likely to play significant role in the nonlinear optical phenomena observed in investigated LDs. The frequency-integrated CTAL flux density at which bleaching takes place is equal to 6.5 x 10⁸ W/m². The hysteresis-type loop can be removed through the LD "run-in" procedure or high-temperature annealing of the LD chip in an hydrogen atmosphere.

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Pascal:08-0155910

Le document en format XML

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<title level="j" type="abbreviated">Appl. phys., B Lasers opt. : (Print)</title>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium Arsenides</term>
<term>Emission spectra</term>
<term>Gallium Arsenides</term>
<term>High temperature</term>
<term>Hysteresis loop</term>
<term>IV characteristic</term>
<term>Indium Arsenides</term>
<term>Laser diodes</term>
<term>Luminescence</term>
<term>Optical waveguides</term>
<term>Output power</term>
<term>Quantum well lasers</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
<term>Waveguide lasers</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Luminescence</term>
<term>Laser semiconducteur</term>
<term>Diode laser</term>
<term>Guide onde optique</term>
<term>Laser guide onde</term>
<term>Laser puits quantique</term>
<term>Haute température</term>
<term>Spectre émission</term>
<term>Caractéristique courant tension</term>
<term>Composé ternaire</term>
<term>Gallium Arséniure</term>
<term>Aluminium Arséniure</term>
<term>Cycle hystérésis</term>
<term>Indium Arséniure</term>
<term>Puissance sortie</term>
<term>As Ga In</term>
<term>InGaAs</term>
<term>Laser AlGaAs</term>
<term>4255P</term>
<term>4279G</term>
</keywords>
</textClass>
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</teiHeader>
<front><div type="abstract" xml:lang="en">It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading to abrupt hysteresis-type changes in the light-current and spectral characteristics. The post-threshold rise of the CTAL flux within the non-lasing parts of the active region is most likely to play significant role in the nonlinear optical phenomena observed in investigated LDs. The frequency-integrated CTAL flux density at which bleaching takes place is equal to 6.5 x 10<sup>8</sup>
 W/m<sup>2</sup>
. The hysteresis-type loop can be removed through the LD "run-in" procedure or high-temperature annealing of the LD chip in an hydrogen atmosphere.</div>
</front>
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</fA05>
<fA06><s2>3-4</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure</s1>
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</fA11>
<fA11 i1="02" i2="1"><s1>BEZYAZYCHNAYA (T. V.)</s1>
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<fA11 i1="03" i2="1"><s1>BOGDANOVICH (M. V.)</s1>
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<fA11 i1="04" i2="1"><s1>PARASTCHUK (V. V.)</s1>
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<fA11 i1="06" i2="1"><s1>BUROV (L. I.)</s1>
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<fA11 i1="07" i2="1"><s1>GORBATSEVICH (A. S.)</s1>
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<fA11 i1="08" i2="1"><s1>RYABTSEV (A. G.)</s1>
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<fA11 i1="09" i2="1"><s1>SHCHEMELEV (M. A.)</s1>
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<fA11 i1="10" i2="1"><s1>BEZOTOSNYI (V. V.)</s1>
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<fA11 i1="11" i2="1"><s1>SHORE (K. A.)</s1>
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<fA11 i1="12" i2="1"><s1>BANERJEE (S.)</s1>
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<fA14 i1="01"><s1>B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnasti Ave. 68</s1>
<s2>220072 Minsk</s2>
<s3>BLR</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Belarusian State University, Nezalezhnasti Ave. 4</s1>
<s2>220050 Minsk</s2>
<s3>BLR</s3>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
<sZ>8 aut.</sZ>
<sZ>9 aut.</sZ>
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<fA14 i1="03"><s1>P.N. Lebedev Physics Institute, Russian Academy of Sciences</s1>
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<sZ>10 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>University of Wales, Bangor, School of Informatics, Dean Street</s1>
<s2>Bangor LL57 1UT, Wales</s2>
<s3>GBR</s3>
<sZ>11 aut.</sZ>
<sZ>12 aut.</sZ>
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<fA20><s1>471-476</s1>
</fA20>
<fA21><s1>2008</s1>
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<fA43 i1="01"><s1>INIST</s1>
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<fA45><s0>36 ref.</s0>
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</fA66>
<fC01 i1="01" l="ENG"><s0>It has been shown that the cavity trapped amplified luminescence (CTAL) flux formed within the active region of a powerful 1.02 μm InGaAs/AlGaAs DQW laser diode (LD) with a ridged waveguide structure, can cause the bleaching of passive areas leading to abrupt hysteresis-type changes in the light-current and spectral characteristics. The post-threshold rise of the CTAL flux within the non-lasing parts of the active region is most likely to play significant role in the nonlinear optical phenomena observed in investigated LDs. The frequency-integrated CTAL flux density at which bleaching takes place is equal to 6.5 x 10<sup>8</sup>
 W/m<sup>2</sup>
. The hysteresis-type loop can be removed through the LD "run-in" procedure or high-temperature annealing of the LD chip in an hydrogen atmosphere.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
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<s5>03</s5>
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<s5>03</s5>
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<s5>09</s5>
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<s5>09</s5>
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<s5>12</s5>
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<s5>13</s5>
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<s5>14</s5>
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<s5>14</s5>
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<fC03 i1="07" i2="X" l="FRE"><s0>Haute température</s0>
<s5>30</s5>
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<s5>30</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Alta temperatura</s0>
<s5>30</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Spectre émission</s0>
<s5>41</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Emission spectra</s0>
<s5>41</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>42</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>IV characteristic</s0>
<s5>42</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Composé ternaire</s0>
<s5>50</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Ternary compounds</s0>
<s5>50</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Gallium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Gallium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>52</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Aluminium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Aluminium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>53</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Cycle hystérésis</s0>
<s5>61</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Hysteresis loop</s0>
<s5>61</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Ciclo histéresis</s0>
<s5>61</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>Indium Arséniure</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>62</s5>
</fC03>
<fC03 i1="14" i2="3" l="ENG"><s0>Indium Arsenides</s0>
<s2>NC</s2>
<s2>NA</s2>
<s5>62</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Puissance sortie</s0>
<s5>63</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Output power</s0>
<s5>63</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Potencia salida</s0>
<s5>63</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>As Ga In</s0>
<s4>INC</s4>
<s5>75</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>InGaAs</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Laser AlGaAs</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>4255P</s0>
<s4>INC</s4>
<s5>91</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>4279G</s0>
<s4>INC</s4>
<s5>92</s5>
</fC03>
<fN21><s1>098</s1>
</fN21>
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   |wiki=   *** parameter Area/wikiCode missing *** 
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   |clé=     Pascal:08-0155910
   |texte=   Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure
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Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

Bleaching effect in passive regions of powerful 1.02 μm InGaAs/AlGaAs DQW laser diodes with ridged waveguide structure

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